Growth and interface of amorphous La_2Hf_2O_7/Si thin film  

作　　者：程学瑞 戚泽明 张焕君 张国斌 潘国强 

机构地区：[1]Department of Technology and Physics, Zhengzhou University of Light Industry [2]National Synchrotron Radiation Laboratory, University of Science and Technology of China

出　　处：《Journal of Rare Earths》2012年第2期189-192,共4页稀土学报（英文版）

基　　金：Projects supported by the National Natural Science Foundation of China (10974191);the School Doctorial Foundation of Zhengzhou University of Light Industry (2010BSJJ028)

摘　　要：Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.Amorphous La2Hf2O7 thin films were deposited on Si（100） substrate by pulsed laser deposition （PLD） method under different con-ditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity （XRR） and X-ray photoelectron spec-troscopy （XPS）. When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.

关 键 词：pulsed laser deposition La2Hf2O7 films rare earths 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]