一种PMOS管传输型高效电荷泵电路设计  

Design of a High Performance Charge Pump by Taking PMOS Transistors as Switch Transistors

作　　者：李珂[1] 郭晓宇[1] 

机构地区：[1]中国电子科技集团公团第五十八研究所,江苏无锡214035

出　　处：《固体电子学研究与进展》2012年第1期95-99,共5页Research & Progress of SSE

摘　　要：设计了一种基于传统Dickson结构的PMOS管传输型电荷泵电路。电路通过衬底电位跟随器实现PMOS管传输,避免了传输过程中阈值电压损失;通过电阻分压反馈网络、控制振荡器输出达到稳压的目的;在电荷泵不工作时,各个子电路关断,实现低功耗设计。仿真结果表明,电路效率高,上电时间短,纹波小;采用SMIC 0.18μm工艺流片,电路达到设计要求,输出高压稳定,驱动能力强,在1M EEPROM电路芯片中得到实际应用。A new charge pump was presented. The threshold voltage loss was avoided by taking PMOS transistors as switch transistors. By a resistor feedback loop, the output voltage was regulated via controlling the oscillation when charge pump didn＇t work, every sub-circuit was cut off to realize low power. Simulation results showed that the new charge pumps had high performance, shorter start up time and small voltage ripple. This circuit had been realized in the SMIC 0. 18 μm CMOS technology and reached the design request. The output voltage was steadv-going and had a strong drive-power. It was actually used in 1 M EEPROM chip normally.

关 键 词：电荷泵 衬底电位调制 P沟道金属氧化物半导体晶体管 

分 类 号：TN433[电子电信—微电子学与固体电子学]