化学超声水浴沉积法制备CdSe薄膜及其性能的研究  

Preparation of CdSe Semiconductor Films by Cultrasonical Chemical bath Deposition Method and Research on its Properties

作　　者：张志乾[1] 武光明[2] 高德文[2] 朱艳英[2] 曹阳[1] 周洋[1] 

机构地区：[1]北京化工大学,北京100029 [2]北京石油化工学院,北京102617

出　　处：《纳米科技》2012年第1期56-60,共5页

摘　　要：以CdCl2.2.5H2O为镉源,Na2SeSO3为硒源,柠檬酸钠为络合剂,采用化学超声水浴沉积法制备了CdSe薄膜,用XRD、UV-Vis、SEM等方法进行表征,结果表明,所制备的薄膜为n型半导体,在可见光区有一定的吸收,可以获得较好的光电流。应用化学超声水浴沉积法制备CdSe薄膜的优化条件为：络合剂比例1：1.5、镉与硒浓度比例2.5：1、PH值10、沉积时间2.5h、退火温度350℃。Take chemical bath deposition method to synthesize CdSe films,with CdCl2·2.5H2O and Na2SeSO3 as precursors,and trisodium citrate as complexing agent.The films were characterized by XRD,SEM,UV-Vis.The results showed that the CdSe films was n-type semiconductor,had abosorption in the visible region,and could get good photocurrent.Optimal condition for preparing the CdSe thin films was that the proportion of the Cd2＋ and trisodium citrate was 1：1.5,the proportion of the Cd2＋ and Se2-was 2.5：1,the PH value was 10,the deposition time was 2.5h,the annealing temperature was 350℃.

关 键 词：CDSE薄膜 超声波 光电性能 化学水浴沉积法 

分 类 号：O484[理学—固体物理]