半导体薄膜实现Nd∶YVO_4 1064nm和1342nm双波长激光被动调Q  

Semiconductor Film Passively Q-Switching for Dual-Wavelength Lasers at 1064 nm and 1342 nm in Nd∶YVO_4 Laser

作　　者：王加贤[1] 王燕飞[1] 

机构地区：[1]华侨大学信息科学与工程学院,福建厦门361021

出　　处：《中国激光》2012年第2期35-39,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金重点项目(60838003);福建省自然科学基金(2009J01291)资助课题

摘　　要：采用射频磁控溅射和热退火处理技术制备SiNx/Si/SiNx多层薄膜,测试了纳米硅晶粒平均尺寸、光学带隙和薄膜对1064nm激光的非线性吸收系数。建立SiNx/Si/SiNx多层薄膜被动调Q的Nd∶YVO4双波长激光器速率方程,得到双波长调Q脉冲的数值模拟结果。在激光二极管(LD)端面抽运的三镜复合腔Nd∶YVO4激光器中,SiNx/Si/SiNx多层薄膜作为可饱和吸收体同时实现了双波长激光被动调Q,获得20ns的1064nm激光脉冲和19ns的1342nm激光脉冲输出。研究表明,薄膜对1064nm和对1342nm的双光子饱和吸收是双波长激光被动调Q的直接原因;激光器两个支腔输出损耗的差别和薄膜对两个波长的非线性吸收系数的相对值影响了双波长脉冲的宽度和时间间隔。The SiNx/Si/SiNx multi-layer film is prepared by radio-frequency magnetron sputtering and thermal annealing.The average grain size of nanocrystalline silicon,the optical band-gap and the nonlinear absorption coefficient at 1064 nm laser are characterized and estimated.The rate-equation theoretical model of the dual-wavelength laser passively Q-switched by SiNx/Si/SiNx multi-layer film is established and the dynamics of the dual-wavelength pulse formation is numerically calculated.Simultaneous dual-wavelength passive Q-switching is realized in a laser diode（LD） end-pumped three-mirror compound resonator Nd∶YVO4 laser using SiNx/Si/SiNx film as the saturable absorber.Both 1064 nm pulse with 20 ns duration and 1342 nm pulse with 19 ns duration are obtained.The results show that dual-wavelength passive Q-switching mainly results from two-photon saturable absorptions for 1064 nm and 1342 nm lasers,and that the difference of output losses between the two overlapping collinear cavities and the relative nonlinear absorption coefficients for dual-wavelength lasers influence the pulse durations and time separation of dual-wavelength pulses.

关 键 词：激光器 双波长脉冲 SiNx/Si/SiNx多层薄膜 被动调QNd∶YVO4激光器 双光子吸收 

分 类 号：TN248.1[电子电信—物理电子学]