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机构地区:[1]Henan Electric Power Research Institute,Zhengzhou,Henan 450052,China [2]Beijing National Laboratory for Molecular Sciences,CAS Key Laboratory of Organic Solids,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China
出 处:《Chinese Journal of Chemistry》2012年第1期19-22,共4页中国化学(英文版)
基 金:This work was supported by the National Natural Science Foundation of China (Nos. 20821120293 and 50933003) and Chinese Academy of Sciences.
摘 要:Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly(3-hexylthiophene) (P3HT) as donor and indene-C70 bisadduct (IC70BA) as acceptor was studied systematically. The device fabrication conditions we studied include pre-thermal annealing temperature, active layer thickness, and the P3HT : IC70BA weight ratios. For devices with a 188-nm-thick active layer of P3HT : ICToBA (1 : 1, w ' w) blend film and pre-thermal annealing at 150 ℃C for 10 rain, maximum power conversion efficiency (PCE) reached 5.82% with Voc of 0.81 V, Isc of 11.37 mA/cm2, and FF of 64.0% under the illumination of AM1.5G, 100 mW/cm2.Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly(3-hexylthiophene) (P3HT) as donor and indene-C70 bisadduct (IC70BA) as acceptor was studied systematically. The device fabrication conditions we studied include pre-thermal annealing temperature, active layer thickness, and the P3HT : IC70BA weight ratios. For devices with a 188-nm-thick active layer of P3HT : ICToBA (1 : 1, w ' w) blend film and pre-thermal annealing at 150 ℃C for 10 rain, maximum power conversion efficiency (PCE) reached 5.82% with Voc of 0.81 V, Isc of 11.37 mA/cm2, and FF of 64.0% under the illumination of AM1.5G, 100 mW/cm2.
关 键 词:Keywords polymer solar cells indene-C70 bisadduct poly(3-hexylthiophene) (P3HT) device fabrication condi-tions
分 类 号:TQ655[化学工程—精细化工] TM914.4[电气工程—电力电子与电力传动]
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