Single event transient pulse attenuation effect in three-transistor inverter chain  

作　　者：CHEN JianJun CHEN ShuMing LIANG Bin LIU FanYu 

机构地区：[1]School of Computer,National University of Defense Technology,Changsha 410073,China

出　　处：《Science China(Technological Sciences)》2012年第4期867-871,共5页中国科学（技术科学英文版）

基　　金：supported by the Key Program of the National Natural Science Foundation of China (Grant No.60836004);the National Natural Science Foundation of China (Grant Nos.61006070,61076025)

摘　　要：In this paper, compared with two-transistor (2T) inverter chain, the production and propagation of P-hit single event transient (SET) in three-transistor (3T) inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. The pulse attenuation effect is found in 3T inverter chain, and the pulse can not completely propagate through the inverter chain as LET increases. The discovery will provide a new insight into SET hardened design, the 3T inverter layout structure (or similar layout structures) will be a better method in integrated circuits (ICs) design in radiation environment.

关 键 词：single event transient （SET） pulse attenuation effect parasitic bipolar amplification effect 

分 类 号：TN958.98[电子电信—信号与信息处理] TM44[电子电信—信息与通信工程]