Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes  

作　　者：FENG MeiXin ZHANG ShuMing JIANG DeSheng WANG Hui LIU JianPing ZENG Chang LI ZengCheng WANG HuaiBing WANG Feng YANG Hui 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215125,China

出　　处：《Science China(Technological Sciences)》2012年第4期883-887,共5页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos.60506001,60976045,60836003,60776047 and 61076119) ;the National Basic Research Program of China ("973" Project) (Grant No. 2007CB936700);the National Science Foundation for Distinguished Yong Scholar (Grant No. 60925017)

摘　　要：A method to calculate the reflectivity of the coated cavity facet was proposed, and the distribution of the optical power near the two coated cavity facets was calculated for GaN-based laser diodes. A new design method for reducing the optical power at the two cavity facets without changing the output power of laser diodes was discussed, which is helpful to optimize the cavity facet coating and raise the threshold current at which catastrophic optical damage occurs.

关 键 词：GaN-based laser diodes facet coating AR coating HR coating COD 

分 类 号：TN365[电子电信—物理电子学] TN248.4