Effect of p-well contact on n-well potential modulation in a 90 nm bulk technology  

作　　者：DU YanKang CHEN ShuMing LIU BiWei LIANG Bin 

机构地区：[1]School of Computer Science,National University of Defense Technology,Changsha 410073,China

出　　处：《Science China(Technological Sciences)》2012年第4期1001-1006,共6页中国科学（技术科学英文版）

基　　金：supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836009);the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025)

摘　　要：The effect of p-well contact on the n-well potential modulation in a 90 nm bulk technology with P+ deep well is studied based on three-dimensional (3-D) TCAD device simulations. Simulation results illustrate that the p-well contact area has a great impact on the n-well potential modulation and the enhancement factor will level out as the p-well contact area increases, and that at the same time the increase of p-well doping concentration can also enhance the n-well potential modulation. However, the effect of p-well contact location on the n-well modulation is not obvious as the p-well contact distance increases. According to our simulation results, it is proposed that the p-well contact area should be cautiously designed to mitigate single event effect (SEE) in the P+ deep well technology.

关 键 词：well potential modulation （WPM） P＋ deep well well contact 

分 类 号：TN303[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]