Modeling to predict the time evolution of negative bias temperature instability(NBTI) induced single event transient pulse broadening  

作　　者：CHEN ShuMing CHEN JianJun CHI YaQing LIU FanYu HE YiBai 

机构地区：[1]School of Computer,National University of Defense Technology,Changsha 410073,China

出　　处：《Science China(Technological Sciences)》2012年第4期1101-1106,共6页中国科学（技术科学英文版）

基　　金：supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004);the National Natural Science Foundation of China (Grant Nos. 61006070, 61076025)

摘　　要：An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis (SPICE) are used to verify the proposed model.

关 键 词：negative bias temperature instability （NBTI） single event transient （SET） pulse broadening analytical model 

分 类 号：TN386[电子电信—物理电子学] O413.1[理学—理论物理]