ZnSnO_3透明导电薄膜:溶胶-凝胶法制备及性能  

Transparent and Conductive Properties of ZnSnO_3 Crystal Films Prepared by Sol-Gel Method

作　　者：季伶俐[1] 贺蕴秋[1,2] 李乐[1] 

机构地区：[1]同济大学材料科学与工程学院,上海200092 [2]同济大学先进土木工程材料教育部重点实验室,上海20092

出　　处：《无机化学学报》2012年第3期437-444,共8页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.50672066)资助项目

摘　　要：采用溶胶-凝胶（Sol-Gel）过程和旋涂法制备了Zn-Sn-O系统薄膜。通过对干凝胶的热重-差示扫描同步热分析（TG-DSC）,研究了干凝胶在烧结过程中的反应历程。采用X射线衍射（XRD）、X射线光电子能谱（XPS）、场发射扫描电镜（FE-SEM）以及紫外-可见透过率（UV-Vis）等表征了烧结后薄膜的晶相、晶格缺陷、微观形貌以及紫外-可见光透过率。本文还研究了烧结温度、N2气氛热处理以及组成变化对薄膜电阻率的影响,结果表明：偏锡酸锌ZnSnO3晶体薄膜具有较低的电阻率;当nZn/（nZn＋nSn）=50.3at%时,薄膜的电阻率达极小值,约为8.0×102Ω.cm。偏锡酸锌ZnSnO3晶体的导电机理研究表明：晶格中间隙阳离子含量的增加有利于薄膜电阻率的降低,而氧空位的形成则使其电阻率升高。薄膜的紫外-可见光透过率（UV-Vis）表明：偏锡酸锌ZnSnO3晶体薄膜在400~900 nm的可见光波段透过率可达80%以上。The Zn-Sn-O system thin films were fabricated by sol-gel process and spin coating technique on silica glasses.The reaction of dry gel during sintering was characterized by Themogravimetry-Differential Scanning Calorimetry synchronous thermal analysis（TG-DSC）.And the crystalline phases,the defects,the morphology and the transmittance of films after sintering in air were characterized by XRD,XPS,FE-SEM and UV-Vis.The resistivity of the films is affected by the sintering temperature in air,the treatment in N2 and the film composition.The ZnSnO3 crystal has a low resistivity and the minimum resistivity（about 8.0×102 Ω·cm）is obtained when nZn/（nZn＋nSn） is equal to 50.3at%.The electric property testing results also show that the defect of interstitial cations in ZnSnO3 lattice is beneficial for a lower resistivity,meanwhile the oxygen vacancies in the lattice leads to an opposite result.The UV-Vis analysis indicates that the transmittance of ZnSnO3 crystal films is more than 80% in the range of 400~900 nm.

关 键 词：ZnSnO3 薄膜 溶胶-凝胶法 透明性 导电材料 

分 类 号：O614.241[理学—无机化学] O614.43[理学—化学]