Theoretical analysis of ultra-fast phase recovery in semiconductor optical amplifiers  

作　　者：CHEN LiGong XU TianXiang ZHENG Xiu ZHANG ShangJian GUO XiaoWei TANG XiongGui LIU Yong 

机构地区：[1]School of Optoelectronic Information, University of Electronic Science ＆ Technology of China, Chengdu 610054, China

出　　处：《Chinese Science Bulletin》2012年第9期1078-1082,共5页

基　　金：supported by the National Basic Research Program of China (2011CB301705);National Natural Science Foundation of China(60925019,61090393 and 60907008)

摘　　要：We present results from theoretical analysis of the phase dynamics in semiconductor optical amplifiers(SOAs).In particular,we focus on an aspect of the ultra-fast phase recovery that currently does not have adequate in-depth theoretical analysis and clear explanation of the physical mechanism.We build up a numerical model to analyze the ultra-fast phase recovery of semiconductor optical amplifiers in details.To investigate the phase response characteristics,we analyze the different contributions to the phase shift,including intra-band effects such as carrier heating,spectral hole burning,and inter-band effects such as carrier depletion.In addition,the impact of the pulses energy on phase shift is also investigated.Based on the analysis of phase response characteristics,we further explain the reason why a delay occurs between gain response and phase response.The analysis results are in good agreement with the reported experimental results.The results presented in this paper are useful for the SOA-based ultra-fast optical signal processing,such as optical switches,optical logic gates,and optical Add/Drop multiplexer.We present results from theoretical analysis of the phase dynamics in semiconductor optical amplifiers （SOAs） . In particular, we focus on an aspect of the ultra-fast phase recovery that currently does not have adequate in-depth theoretical analysis and clear explanation of the physical mechanism. We build up a numerical model to analyze the ultra-fast phase recovery of semiconductor optical amplifiers in details. To investigate the phase response characteristics, we analyze the different contributions to the phase shift, including intra-band effects such as carrier heating, spectral hole burning, and inter-band effects such as carrier depletion. In addition, the impact of the pulses energy on phase shift is also investigated. Based on the analysis of phase response characteris- tics, we further explain the reason why a delay occurs between gain response and phase response. The analysis results are in good agreement with the reported experimental results. The results presented in this paper are useful for the SOA-based ultra-fast opti- cal signal processing, such as optical switches, optical logic gates, and optical Add/Drop multiplexer.

关 键 词：半导体光放大器 光分/插复用器 动力学理论 光信号处理 物理机制 数值模型 响应特性 载体加热 

分 类 号：TN722[电子电信—电路与系统] TN929.11