PZT压电厚膜用PT过渡层的制备及表征  

Preparation and Characterization of PT Transition Layer for Piezoelectric PZT Thick Film

作　　者：段中夏[1] 刘俊标[1] 韩立[1] 

机构地区：[1]中国科学院电工研究所,北京100190

出　　处：《纳米科技》2011年第5期28-31,72,共5页

基　　金：中国博士后基金项目（No.20100470546）

摘　　要：用溶胶-凝胶法在Pt（111）／Cr／SiO2／Si衬底上制备了（100）取向PT过渡层，探讨了制备工艺条件对胛过渡层成膜情况的影响，结果表明，快速热处理工艺制备的PT过渡层结晶较好，而热解时间过长和退火时间过长都会引起铅的损失，造成TiO杂相的出现，从而对PT过渡层的结晶产生不利影响。Controlling the transition layer is an effective method to get the preferred orientation film. （100）oriented PT transition layer has been prepared on Pt/Cr/SiO2/Si substrate by sol-gel. The influences of preparation process on the microstructure were investigated. Experiment results show that, PT transition layer prepared by rapid heat treatment has better crystallization. Long pyrolysis and annealing time caused the loss of lead, resulting in the emergence of TiO impurity, and caused negative impact on the crystallization of PT transition layer. （100） oriented piezoelectric PZT thick film has been successfully prepared on Pt/Cr/SiOJSi substrate by sol-gel.

关 键 词：PT 过渡层 (100)取向 制备工艺 PZT 

分 类 号：TN304.9[电子电信—物理电子学]