In,Al共掺杂ZnO纳米串光电探测器的组装与研究  

Fabrication of In-Al codoped ZnO nanobunches photodetectors

作　　者：袁泽[1] 高红[1] 徐玲玲[1] 陈婷婷[1] 郎颖[1] 

机构地区：[1]哈尔滨师范大学物理与电子工程学院物理系,半导体纳米复合材料省部共建教育部重点实验室,哈尔滨150025

出　　处：《物理学报》2012年第5期385-389,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11074060,51101069);哈尔滨师范大学博士启动基金资助的课题~~

摘　　要：用化学气相沉积法合成了高密度的In,A1共掺杂ZnO纳米串,用合成出的纳米串组装成了光电探测器.纳米串为六角纤锌矿结构,平均长度大约为5μm.研究了光电导的机制以及光电探测器的光电特性,包括在暗环境及紫外照射下的伏安特性、光电响应率和光电响应时间.结果表明,器件存在内部增益机制,光响应时间小于0.5 s,衰减时间约为23 s,可用于光电探测.High-density In-Al codoped ZnO （In, AI, ZnO） nanobunches are synthesized by using chemical vapor deposition method, which can be used to fabricate In, Al, ZnO nanobunches photodetectors. The ZnO nanobunches each have a hexagonal wurtzite structure. It is found that the average length of the nanobunches is - 5um. The photoconduction mechanism and a series of photoelectric characteristics are studied including I-V characteristic measured in dark and UV illumination, responsivity and response time. The results indicate the presence of an internal gain mechanism. The response time is less than 0.5 s and decay time is about 23 s, so the fabricated device can indeed be used for light detection.

关 键 词：In Al共掺杂ZnO 纳米串 光电探测器件 化学气相沉积法 

分 类 号：TN36[电子电信—物理电子学]