SiO_2对低温烧结压电陶瓷PMNNS的性能影响  

Effects of SiO_2 on the Properties of Low Temperature Sintering Piezoelectric Ceramics PMNNS

作　　者：陈伟业[1] 刘彭义[2] 林彩平[1] 常鹏[1] 

机构地区：[1]暨南大学物理系,广州510632 [2]暨南大学思源实验室,广州510632

出　　处：《人工晶体学报》2012年第1期141-145,共5页Journal of Synthetic Crystals

基　　金：广东省教育部产学研结合项目(2009B090300093);广州市科技计划基金资助项目(2008Z-D411)

摘　　要：在烧结温度为1020℃下,采用固相二步合成法制备了Pb(Ni1/3Nb2/3)0.05(Mn1/3Nb2/3)0.04(Mn1/3Sb2/3)0.01(Zr1/2Ti1/2)0.9O3(PMNNS)压电陶瓷,研究了加入不同掺杂量的SiO2对陶瓷的结构与机电性能的影响。结果表明:加入SiO2可以明显地降低烧结温度;而且当SiO2的掺杂量为0.1%时,陶瓷的性能最佳,其性能如下:d33=331 pC/N,tanδ=0.0041,kp=0.62,Qm=1326,εr=917。Pb（Ni1/3Nb2/3）0.05（Mn1/3Nb2/3）0.04（Mn1/3Sb2/3）0.01（Zr1/2Ti1/2）0.9O3（PMNNS） were prepared using the two-step solid phase synthesis method at the sintering temperature of 1020 ℃.The effects of different amount of SiO2-doped on crystallographic phase and electromechanical properties were investigated.The results showed that SiO2 addition could significantly reduced the sintering temperature,and when the amount of SiO2 doped was 0.1%,the optimized properties were obtained,which are listed as follows：d33=331 pC/N,tanδ=0.0041,kp=0.62,Qm=1326,εr =917.

关 键 词：压电陶瓷 PMNNS 低温烧结 SIO2 

分 类 号：TQ174[化学工程—陶瓷工业]