掺铒PLZT电光陶瓷发光特性  

Luminescence Characteristics of Er^(3+) Doped PLZT Ceramics

作　　者：冯卓宏[1] 林林[1] 王哲哲[1] 郑志强[1] 

机构地区：[1]福建师范大学物理与光电信息科技学院,福州350007

出　　处：《人工晶体学报》2012年第1期165-170,共6页Journal of Synthetic Crystals

基　　金：福建省教育厅JK类科技项目(JK2011008);福建省科技重大专项课题(2007HJ0004-2)资助项目;福建省青年人才创新项目(2007F3027)

摘　　要：测量并分析了Er3+∶PLZT电光陶瓷的吸收光谱和上转换光谱,利用Dexter理论和速率方程理论研究了该材料的发光特性。通过Dexter理论计算得到4I13/2+4I13/2→4I9/2+4I15/2(ET1)和4I11/2+4I11/2→4I15/2+4F7/2(ET2)能量传递过程的交叉驰豫几率分别为2.06×105s-1和1.61×105s-1。以此为基础,结合Er3+跃迁的动力学模型,利用速率方程讨论了交叉驰豫过程对4I13/2,4I11/2,4I9/2能级上离子数的影响。通过分析可知,ET1和ET2交叉驰豫过程将会使4I13/2能级粒子数大幅度减少,不利于1550 nm发光,而对800 nm的发光起到较大的促进作用。The absorption spectrum and upconversion spectrum of Er3＋ doped PLZT ceramic were analyzed,and the luminescence characteristics of this material were studied by Dexter theory and rate equation.The cross relaxation rates of 4I13/2＋4I13/2→4I9/2＋4I15/2（ET1）and 4I11/2＋4I11/2→4I15/2＋4F7/2（ET2） were obtained as 2.06×105 s-1 and 1.61×105 s-1,respectively.A simple model to describe the frequency upconversion dynamics of Er3＋ was proposed,and the influences of cross relaxation processes on dynamic of ions in the excited states were discussed by rate equation.The cross relaxation processes of ET1 and ET2 huge decrease the population of 4I13/2 level,and obstacles to luminescence of 1550 nm.Oppositely,ET processes promote the luminescence of 800 nm.

关 键 词：发光特性 PLZT陶瓷 Dexter理论 交叉驰豫几率 

分 类 号：O433[机械工程—光学工程]