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机构地区:[1]清华大学摩擦学国家重点实验室,北京100084 [2]深圳清华大学研究院,深圳518057
出 处:《纳米技术与精密工程》2012年第2期177-183,共7页Nanotechnology and Precision Engineering
基 金:国家重点基础研究发展计划(973计划)资助项目(2011CB013102);国家高技术研究发展计划(863计划)资助项目(2009AA043101);广东省自然科学基金重点资助项目(8251805701000001)
摘 要:在硬盘盘基片的最终抛光中,研究SiO2溶胶颗粒、氧化剂、络合剂和润滑剂对盘基片Ni-P材料抛光性能的变化规律,获得较高的材料去除速率(MRR)和原子级光滑表面,以满足下一代硬盘盘基片制造的更高要求.结果表明,采用平均粒径25 nm的SiO2溶胶颗粒,易减少微划痕等缺陷;以过氧化氢为氧化剂,可大幅提高MRR;加入有机酸络合剂后,MRR显著增大,其中含有水杨酸的抛光液MRR最大,并讨论不同络合剂对盘基片去除的影响机理;丙三醇润滑剂的引入,使抛光中摩擦系数减小,盘基片的表面粗糙度得到明显降低.采用原子力显微镜(AFM)、光学显微镜和Chapman MP2000+表面形貌仪来考察盘基片抛光后的表面质量,基于抛光液各组分的影响作用,最终获得表面粗糙度Ra为0.08 nm的盘基片表面,且MRR达到0.132μm/min.A slurry containing silica sol particles, oxidant, complexing agent and lubricant agent was de- veloped in final polishing of hard disk Ni-P substrate to realize high material removal rate (MRR) and atomic level roughness smooth surface for more rigorous demands of hard disk. The effects of slurry ingre- dient on polishing performance were researched. The results show that silica sol with the average particle size of 25 nm can reduce the generation of micro-scratches. Hydrogen peroxide as oxidant helps to im- prove MRR obviously. MRR increases when organic acid , especially salicylic acid is added as comple- xing agent. The influences of different complexing agents on MRR were investigated, and their influence mechanisms were discussed. When glycerin is introduced into the slurry as lubricant agent, friction coef- ficient in polishing process is reduced, and the surface roughness of hard disk substrate decreases remark- ably. Atomic force microscope ( AFM), optical microscope and Chapman MP2000 + surface profiler were used to examine polishing surface quality. Finally, hard disk substrate surface with the surface roughness Ra of 0.08 nm and MRR of 0. 132 μm/min was obtained under the effect of different slurry ingredients.
关 键 词:硬盘盘基片 Ni—P 化学机械抛光(CMP) 络合剂
分 类 号:TP333.35[自动化与计算机技术—计算机系统结构]
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