电泳法制备平栅极碳纳米管场发射阴极及场发射特性研究  

Field Emission Properties of Electrophoretic Deposited CNT with Coplanar Gate Structure

作　　者：赵文中[1] 祁康成[1] 文永亮[1] 李鹏[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2012年第1期15-17,共3页Chinese Journal of Electron Devices

基　　金：电子激励ZnO纳晶薄膜荧光机制与紫外光效率研究(61106040)

摘　　要：采用电泳法在ITO玻璃基板上选择性制备了碳纳米管(CNTs)阴极薄膜,采用电子扫描(SEM)分析了CNTs薄膜的表面形貌,并测试了碳纳米管阴极的场致发射特性。结果表明,利用电泳法制得的碳纳米管阴极薄膜均匀性、致密性良好,且具有较大发射电流密度;通过控制共面栅控CNTs场发射阴极的栅极电位能够有效控制阴极的场发射电流密度。当阳极电压为450 V,栅极电压230 V时,发射电流密度达到7.6 mA/cm2。Gated carbon nanotubes（CNTs） field emission cathode film was fabricated on ITO coated glass substrate by electrophoresis deposition. The Electrophoretic Deposited CNT film was investigated by scanning electronmicroscopy（SEM） and the emission properties were experimented by using triode structure. CNTs films fabricated by electrophoresis deposition are dense and uniform, and have a larger emission current density. By controlling the gate potential of the coplanar gated CNTs field emission cathode, the emission current density can be successfully modulated. The emission current density of CNTs field emission cathode is 7.6 mA/cm2 when the anode voltage is 450 V and the gate voltage is 230 V.

关 键 词：场致发射 碳纳米管 电泳法 平栅结构 

分 类 号：O642.4[理学—物理化学]