镉在嵌入式碳纳米管-铋膜玻碳电极上的电化学行为及电位溶出法测定研究  

Study on electrochemical behavior of cadmium on inlaid carbon nanotubes-bismuth film glassy carbon electrode and determination by potentiometric stripping method

作　　者：高云涛[1,2] 周学进[1,2] 刘琼[1,2] 张公信[1,2] 李晓芬[1,2] 

机构地区：[1]云南民族大学化学与生物技术学院,云南昆明650031 [2]民族药资源化学国家民委-教育部重点实验室,云南昆明650500

出　　处：《冶金分析》2012年第2期11-16,共6页Metallurgical Analysis

基　　金：NSFC-云南联合基金资助项目(U0833603)

摘　　要：制备了一种新型嵌入式碳纳米管-铋复合膜玻璃碳电极,利用循环伏安法研究了Cd在电极上的电化学行为。Cd在电极具有一个不可逆的氧化峰,Epa=0.637V(vs.SCE),电极对Cd具有高灵敏的电化学响应。研究了影响Cd微分电位溶出的因素,获得的最佳条件是:富集电位为-1.1V,Bi 3+浓度为0.4mg/L,pH 4.6HAc-NaAc缓冲溶液。通过同位镀铋、标准加入法进一步提高了分析的可靠性。在最佳条件下,峰高与Cd质量浓度在0.1～2.0μg/L范围呈线性,检出限为0.2μg/L。对实际样品进行测定,测定值与原子吸收光谱法的结果一致,RSD在3.1%～7.2%范围,回收率在92%～102%之间。A novel inlaid carbon nanotubes-blsmuth film glassy carbon electroae was preparcu. electrochemical behavior of Cd on the electrode was investigated by cyclic voltammetry. An inrevers- ible oxidation peak of Cd on the electrode was observed, Epa=0. 637 V（vs. SCE）. High sensitive elec- trochemical response of Cd on this electrode was obtained. The influencing factors for differential potentiometric stripping analysis of Cd were tested. The optimum conditions were -1.1 V of deposition potential, 0.4 mg/L of Bi^3＋ concentration, pH 4.6 HAc-NaAc buffer solution. The analytical reliability of this electrode was enhanced by in-situ plated bismuth film and standard addition method. The stripping peak height （dt/dE） is a linear function of Cd concentration over the range 0.1-2.0μg/L in the optimum conditions, with the detection limit of 0.2 μg/L. The proposed method was application in the determination of Cd in practical samples, the result was in agreement with those provided by AAS, RSD and the recovery were 3.1%-7.2%, 92%0-102%, respectively.

关 键 词：镉 碳纳米管 铋膜电极 嵌入 循环伏安法 微分电位溶出法 

分 类 号：O657.15[理学—分析化学]