DBD-CVD法制备掺氮二氧化钛薄膜及其结构性能  

Microstructure and Properties of N-Doped TiO_2 Films Grown by Dielectric Barrier Discharge Enhanced Chemical Vapor Deposition(DBD-CVD)

作　　者：高倩[1] 李喆[1] 李铭[1] 刘涌[1] 宋晨路[1] 韩高荣[1] 

机构地区：[1]浙江大学材料科学与工程学系,硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2012年第1期93-97,共5页Journal of Materials Science and Engineering

基　　金：国家科技支撑计划资助项目(2011BAE14B02)

摘　　要：采用介质阻挡放电化学气相沉积(DBD-CVD)法制备TiO2透明自清洁功能薄膜,选用四异丙醇钛(TTIP)、NH3作为反应先驱体,另外再加入一定量的N2、Ar或者He作为稀释气体控制气体的流量和流速。通过对其进行X射线衍射、紫外-可见光谱、X光电子能谱、场发射扫描电镜、光催化性质、光亲水性质等测试表明,过DBD-CVD方法制备TiO2薄膜,只存在锐钛矿相,氮掺杂改变了薄膜中锐钛矿相晶粒生长的取向,从而影响薄膜的表面微观结构,促使光吸收限红移,提高了薄膜在可见光照射下的光催化效率,并改善了薄膜表面的亲水性能。N-doped TiO2 films were grown by dielectric barrier discharge enhanced chemical vapor deposition（DBD-CVD） with TTIP and NH3 as precursors.X-ray diffractometry（XRD）,ultraviolet-visible light（UV-Vis） spectroscopy,X-ray photoelectron spectroscopy（XPS） and scanning electron microscopy（SEM） were used to characterize the films.We also tested the photocatalytic activity and hydrophilicity of the films.It is found that there is only anatase phase in the TiO2 films grown by DBD-CVD and the flux of N-doping sources change the growth orientation,affect the surface microstructure of thin films and narrower the band gap,improve the visible-light-induced photocatalytic activity and hydrophilicity of TiO2 thin films.

关 键 词：TIO2薄膜 介质阻挡放电化学气相沉积(DBD-CVD) 表面微观结构 掺N 光催化性 亲水性 

分 类 号：O484.4[理学—固体物理]