The electrical properties of sulfur-implanted cubic boron nitride thin films  

作　　者：邓金祥 秦扬 孔乐 杨学良 李廷 赵卫平 杨萍 

机构地区：[1]College of Applied Sciences,Beijing University of Technology,Beijing 100124,China

出　　处：《Chinese Physics B》2012年第4期458-460,共3页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 60876006 and 60376007);the Natural Science Foundation of Beijing, China (Grant No. 4072007);the Scientific Research Program of Beijing Municipal Commission of Education, China (Grant No.KM200910005018);the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China;the Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality

摘　　要：Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400℃ and 800℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400℃ and 800℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.

关 键 词：cubic boron nitride ion implantation surface resistivity activation energy 

分 类 号：O484.42[理学—固体物理]