Homogeneous interface-type resistance switching in Au/La_(0.67)Ca_(0.33)MnO_3/SrTiO_3/F:SnO_2 heterojunction memories  

作　　者：张婷 丁玲红 张伟风 

机构地区：[1]Key Laboratory of Photovoltaic Materials of Henan Province,School of Physics and Electronics,He'nan University,Kaifeng 475004,China

出　　处：《Chinese Physics B》2012年第4期467-472,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 60976016);the Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTHN),China (Grant No. 2012IRTSTHN004);the Research Program of Henan University, China (Grant No. SBGJ090503)

摘　　要：La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.

关 键 词：La0.67Ca0.33MnO3 thin films resistance switching impedance spectroscopy metal-oxide interface 

分 类 号：O484.1[理学—固体物理]