A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel  

作　　者：张健 何进 周幸叶 张立宁 马玉涛 陈沁 张勖凯 杨张 王睿斐 韩雨 陈文新 

机构地区：[1]Tera-Scale Research Centre(TSRC),School of Electronics Engineering and Computer Science(EECS),Peking University,Beijing 100871,China [2]Peking University Shenzhen System on Chip(SOC)Key Laboratory,PKU-HKUST Shenzhen-Hongkong Institution,W303,West Tower,IER Bldg,Hi-Tech Industrial Park South,Shenzhen 518057,China [3]Department of Electronics and Computer Engineering(ECE),Hong Kong University of Science and Technology,Kowloon,Clearwater Bay,Hong Kong,China

出　　处：《Chinese Physics B》2012年第4期478-485,共8页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 60876027);the State Key Program of the National Natural Science Foundation of China (Grant No. 61036004);the Shenzhen Science and Technology Foundation, China (Grant No. CXB201005250031A);the Fundamental Research Project of Shenzhen Science and Technology Foundation, China (Grant No. JC201005280670A);the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A)

摘　　要：A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.

关 键 词：charge-based model silicon-on-insulator metal-oxide semiconductor field-effect transis- tors compact model double gate 

分 类 号：TN386.1[电子电信—物理电子学] TQ028.8[化学工程]