Focused ion beam built-up on scanning electron microscopy with increased milling precision  

作　　者：LUO Hu WANG HaiLong CUI YiMin WANG RongMing 

机构地区：[1]Key Laboratory of Micro-nano Measurement-manipulation and Physics(Ministry of Education),Department of Physics,Beijing University of Aeronautics and Astronautics,Beijing 100191,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第4期625-630,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 50971011);Beijing Natural Science Foundation (Grant No. 1102025);Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091102110038);the Fundamental Research Funds for the Central Universities (Grant No. 11174023)

摘　　要：In this work,a focused ion beam(FIB)-scanning electron microscopy(SEM) dual beam system was successfully built by integrating a FIB column and a graphics generator onto a SEM.Real-time observation can be realized by SEM during the process of FIB milling.All kinds of graphics at nanoscale regime,such as lines,characters,and pictures,were achieved under the control of graphics generator.Moreover,the FIB milling line width can be reduced nearly 27% by the introduction of simultaneous electron beam,and a line width as small as 10 nm was achieved.The numerical analysis indicates that the significant improvement on line width is induced by the Coulomb interaction between the electrons and ions.In this work, a focused ion beam （FIB）-scanning electron microscopy （SEM） dual beam system was successfully built by integrating a FIB column and a graphics generator onto a SEM. Real-time observation can be realized by SEM during the process of FIB milling. All kinds of graphics at nanoscale regime, such as lines, characters, and pictures, were achieved under the control of graphics generator. Moreover, the FIB milling line width can be reduced nearly 27% by the introduction of simultaneous electron beam, and a line width as small as 10 nm was achieved. The numerical analysis indicates that the significant improvement on line width is induced by the Coulomb interaction between the electrons and ions.

关 键 词：FIB-SEM dual beam system milling precision INCREASE numerical simulation 

分 类 号：TN16[电子电信—物理电子学] TN305.7