无膜微通道板第三代像增强器的可行性及技术途径探究  

Exploring the Feasibility and Approach for Unfilmed-Microchannel-Plate Based Third Generation Image Intensifiers

作　　者：潘京生[1,2] 吕景文[1] 李燕红[3,2] 周建勋[2] 

机构地区：[1]长春理工大学材料科学和工程学院,吉林长春120022 [2]北方夜视技术股份有限公司南京分公司,江苏南京211102 [3]北京理工大学光电学院,北京100081

出　　处：《光学学报》2012年第3期273-279,共7页Acta Optica Sinica

摘　　要：砷化镓光阴极的量子效率大大优于超二代多碱光阴极,但由于微通道板(MCP)输入面上的离子阻挡膜的存在,第三代像增强器,即使是薄膜第三代像增强器,相比于同时期技术水平的超二代像增强器,在标准测试条件下的信噪比和分辨力等参数上并无明显优势。通过引入MCP噪声因子的概念,对像增强器光阴极量子效率的有效利用率进行了评价。强调了实现无膜MCP第三代像增强器的必要性,并指明了目前的无膜MCP第三代像增强器开发中所存在的问题,对改善MCP耐电子清刷除气能力及进一步地减少MCP中的有害物种含量的有效方法进行了研究,进而明确了实现高可靠性高性能无膜MCP第三代像增强器的可行性和有效技术途径。Gallium arsenic （GaAs） photocathode demonstrates an excellent quantum efficiency superior to multialkali photocathode. Because of an ion barrier film existed on the input face of microchannel plate （MCP）, gen. 3 image intensifiers tubes （ⅡT）, even the thin film gen. 3 ⅡT, have not shown evident advantage on the main parameters of singal-to-noise ratio and resolution under standard test condition over super gen. 2 liT which updated simultaneously. The effective availability of photocathode quantum efficiency of IIT are evaluated by introducing a conception of MCP noise figure. Necessity of the realization of unfilmed gen. 3 ⅡT is emphasized. The problem remains in the currently unfilmed MCP gen. 3ⅡT are indicated. The methods to improve MCP endurance capability of electron scrubbing resistance degassing treatment and further reduction of the number of poison species which contain in MCP substrate are researched, while the feasibility and technology approach for high reliability and high performance unfilmed MCP gen. 3 ⅡT are pointed out.

关 键 词：探测器 像增强器 无膜MCP第三代像增强器 微通道板(MCP) 离子阻挡膜 砷化镓光阴极 

分 类 号：TN223[电子电信—物理电子学]