Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor  

作　　者：庄翔 乔明 张波 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Chinese Physics B》2012年第3期405-410,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60906038)

摘　　要：This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage （BV） for an ultra-high-voltage （UHV） high-side thin layer silicon-on-insulator （SOI） p-channel low-density metal- oxide semiconductor （LDMOS）. Compared with the conventional simulation method, the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit. The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method. Simulation results show that the off-state （on-state） BV of the SOI p-channel LDMOS can reach 741 （620） V in the 3μm-thick buried oxide layer, 50μm-length drift region, and at -400 V back-gate voltage, enabling the device to be used in a 400 V UHV integrated circuit.This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage （BV） for an ultra-high-voltage （UHV） high-side thin layer silicon-on-insulator （SOI） p-channel low-density metal- oxide semiconductor （LDMOS）. Compared with the conventional simulation method, the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit. The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method. Simulation results show that the off-state （on-state） BV of the SOI p-channel LDMOS can reach 741 （620） V in the 3μm-thick buried oxide layer, 50μm-length drift region, and at -400 V back-gate voltage, enabling the device to be used in a 400 V UHV integrated circuit.

关 键 词：silicon on insulator breakdown voltage back-gate voltage p-channel low-density metaloxide-semiconductor 

分 类 号：TN304.21[电子电信—物理电子学] TM71[电气工程—电力系统及自动化]