激光波长对SOI激光结晶机理的影响  

Effect of laser wavelength on laser crystallization mechanism of a-Si SOI

作　　者：蒋锡平 鲍希茂[1] 华雪梅[1] 

机构地区：[1]南京大学物理系,210008

出　　处：《中国激光》1990年第10期615-618,629,共5页Chinese Journal of Lasers

摘　　要：本文用两种波长不同的激光——Ar^+激光和CO_2激光,对以石英为衬底的a-Si SOI进行了激光结晶。两者的结晶机理不同,得到了不同的结晶形貌。Two lasers with different wavelengths-the argon laser and CO2 laser have been used for laser crystallization of a-Si SOI. Using the argon laser we have a direct heating laser crystallization, while for CO2 laser we have an indirect heating laser crystallization. The crystallization mechanisms for both cases are different and different topographies are obtained.

关 键 词：非晶硅 SOI结晶 激光 外延生长 

分 类 号：TN304.12[电子电信—物理电子学]