Cr∶KTiOPO_4晶体缺陷的研究  

Investigation on Defects of Cr∶KTiOPO_4 Crystal

作　　者：胡秀琴[1] 官文栎[1] 牟其善[1] 刘希玲 马长勤[2] 王绪宁[2] 

机构地区：[1]山东教育学院,济南250013 [2]山东大学化学院,济南250100

出　　处：《人工晶体学报》2000年第1期69-72,共4页Journal of Synthetic Crystals

基　　金：山东省自然科学基金 ;山东大学晶体材料国家重点实验室开发经费资助

摘　　要：首次报道了利用光学显微法和同步辐射白光X射线形貌术对Cr∶KTP晶体缺陷的研究结果。光学显微法采用热磷酸作为腐蚀剂 ,用Opton大型显微镜反射法观察 ,观测到 (10 0 )面和 (0 2 1)面的位错蚀坑以及 (0 2 1)面的小角度晶界。用同步辐射白光X射线形貌术作出 (0 0 1)面、(0 10 )面和(10 0 )面形貌图 ,从图中可明显观察到生长层、扇形界及位错线。由此得出 ,Cr∶KTP晶体的主要缺陷是位错、生长扇形界、生长层等。The defects of Cr∶KTP crystals have been studied by optical micrography and white beam synchrotron radiation topography.In optical micrography,the samples were etched by hot phosphoric acid and observed by reflection method with Opton microscope.The etch pits of dislocation on (021),(100) faces and the low angle grain boundaries on (021) face were revealed.And the growth striation,sector boundaries and dislocation have been shown by means of synchrotron radiation topography.It is the conclusion that the main defects in the crystals are growth sector boundaries,growth stripes,and dislocation.

关 键 词：形貌 非线性光学晶体 缺陷 掺铬 磷酸钛氧钾晶体 

分 类 号：TQ131.13[化学工程—无机化工] O771[理学—晶体学]