TiO2表面氧空位对Rup2P/TiO2/ITO薄膜电极光致电荷转移的影响  

Infection of Oxygen Vacancy at the TiO_2 Surface for Film Electrode Rup_2P/TiO_2/ITO Photo-Induced Charge Transfer

作　　者：程辉[1,2] 董江舟[2] 巢晖[3] 姚江宏[1,2] 曹亚安[1,2] 

机构地区：[1]南开大学物理科学学院,天津300071 [2]南开大学泰达应用物理学院,弱光非线性光子学教育部重点实验室,天津300457 [3]中山大学化学与化学工程学院,广州510275

出　　处：《物理化学学报》2012年第4期850-856,共7页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(50872056,51072082,21173121,11074129)资助项目~~

摘　　要：采用改性的TiCl4水解法制备出三种不同表面性质的TiO2-X(X=5,10,20,X表示加入NaOH的浓度,单位为mo·lL-1)样品.利用(1,10-邻菲咯啉)2-2-(2-吡啶基)苯咪唑钌混配配合物(Rup2P)作为敏化剂,制备出Rup2P/TiO2-5/ITO(铟锡金属氧化物)、Rup2P/TiO2-10/ITO和Rup2P/TiO2-20/ITO表面敏化薄膜电极.测试结果表明三种薄膜电极的光电转换效率Rup2P/TiO2-10/ITO最高,Rup2P/TiO2-20/ITO次之,Rup2P/TiO2-5/ITO最低.利用吸收光谱、表面光电压(SP)谱、荧光光谱和表面光电流作用谱等分析了Rup2P和三种TiO2的能带结构和表面性质;利用光致循环伏安和表面光电流作用谱研究了三种Rup2P/TiO2-X/ITO薄膜电极的光致界面电荷转移过程.结果表明,在光致界面电荷转移过程中,TiO2层表面氧空位对Rup2P/TiO2-X/ITO薄膜电极光致电荷转移产生重要影响.并进一步讨论了Rup2P/TiO2-X/ITO薄膜电极的光电流产生机理.The surface properties of TiO2 -X（X=5,10,20,X=[NaOH]（in mol·L^-1 ））samples prepared by modification of hydrolyzed TiCl4 were studied.The surface-sensitized Ru（phen）2 （PIBH）（Rup2P）（phen= phenanthroline,PIBH=pyridyl benzimidazole hybrid）film electrodes Rup2 P/TiO2-5/ITO（indium tin oxide）, Rup2P/TiO2-10/ITO,and Rup2P/TiO2-20/ITO were prepared.Among the three films,the photovoltaic properties of Rup 2P/TiO2-10/ITO were the best and those of Rup2 P/TiO2-5/ITO were the worst.The band structures,and properties on the surfaces of Rup2 P and the three TiO2 samples were analyzed using absorption spectra,surface photovoltage spectra,photoluminescence spectra,and photocurrent action spectra.The photo-induced charge transfer process was studied by cyclic voltammetry under irradiation and photocurrent action spectra.The results revealed the oxygen vacancy at the TiO2 surface was very important for the photo-induced charge transfer process of Rup2P/TiO2-X/ITO.The photocurrent mechanism of Rup2 P/TiO2-X/ITO is discussed.

关 键 词：Rup2P TIO2 表面敏化 Rup2P/TiO2-X/ITO 光致电荷转移 

分 类 号：O646[理学—物理化学] O647[理学—化学]