一种新的RF预失真方案的设计与仿真  

Design and Simulation of a New RF Predistortion Circuit

作　　者：马中华[1] 欧阳军[2] 柯友艺[1] 陈红霞[1] 陈大灿[1] 

机构地区：[1]集美大学信息工程学院,福建厦门361021 [2]集美大学航海学院,福建厦门361021

出　　处：《厦门大学学报（自然科学版）》2012年第2期179-184,共6页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金项目(60803078);福建省教育厅科技项目(JB11096)

摘　　要：根据预失真原理,利用对消的方法,提出一种改进的预失真电路的方案,设计了分别产生三阶和五阶互调分量预失真器电路.最后以Polyfet公司的有记忆效应的功放管设计的功率放大电路为例,分析比较了未加预失真电路的功放性能和加了预失真电路的功放性能,测试结果表明失真分量有了很大的改善,三阶互调系数(IMD3)改善了20.5dB,五阶互调系数(IMD5)改善了3.8dB.IMD3比传统的方案提高了3.2dB,IMD5比传统的方案提高了5.8dB.According to the predistortion theory and cancellation method,an improved program of predistortion circuit is put forward,which includes the third-order and the fifth-order intermodulation-component′s predistortion circuit.Finally,take the power amplifier device of Polyfet company′s memory effect as an example,analyzing and comparing the power′s performance between unpredistortion circuit and predistortion circuit,which tests the improvement level of distortion′s component.The third-order intermodulation-supression is improved 20.5 dB.Meanwhile,the fifth-order intermodulation-supression is improved 3.8 dB.The third-order intermodulation-supression is improved 3.2 dB than conventional scheme.the fifth-order intermodulation-supression is improved 5.8 dB than conventional scheme.

关 键 词：峰均比 预失真 互调失真 记忆效应 

分 类 号：TN830.6[电子电信—信息与通信工程]