640×512 InGaAs探测器驱动电路设计  

A Design for Driving Circuit of 640×512 InGaAs Detector

作　　者：刘云芳[1,2] 李建伟[1] 李玉敏[1] 冯旗[1] 

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]中国科学院研究生院,北京100039

出　　处：《红外技术》2012年第3期146-150,共5页Infrared Technology

基　　金：国家重大工程项目(O9KCE009N0);中国科学院上海技术物理研究2011年所创新专项前沿前瞻性项目联合资助

摘　　要：在介绍了640×512 InGaAs探测器工作原理的基础上,详细分析了InGaAs探测器驱动电路的组成原理、设计方法,重点是偏置电压电路、脉冲电压与控制信号驱动电路、探测器工作温度检测及控制电路的设计等关键技术。采用模拟PI温控电路保证了探测器内部制冷器在温控过程中对探测器无干扰,并能使探测器稳定地工作在合适的温度点,这样有利于提高仪器的信噪比。试验结果表明:该驱动电路满足系统要求,能用于工作温度比较宽的场合,并具有体积小、实用性好、可靠性高等特点。On the basis of introducing the work principle of 640×512 InGaAs detector, the structure of 640×512 InGaAs detector driving circuit and the method of design are analyzed. The discussed key problems are bias voltages circuit, pulse voltages and controlling signals driving circuit, the collecting and controlling circuit for InGaAs detector working temperature are introduced. The analog PI temperature controlled circuit is adopted, that make sure the process of detector working has no disturb and the detector can work stability, is also can improve the signal-to-noise（SNR） of instrument .Experiments demonstrate the validity of the design of InGaAs detector-driven circuit. The driving circuit is fit for wide working temperature, is has peculiarity of small volume, good practicability and high reliability.

关 键 词：INGAAS探测器 驱动电路 模拟PI温控电路 

分 类 号：TN215[电子电信—物理电子学]