不同含锰化合物掺杂对BST-MgO陶瓷介电性能的影响  

Effects of various manganese dopants on dielectric properties of BST-MgO ceramics

作　　者：史霄[1] 汪小红[1] 吕文中[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《电子元件与材料》2012年第4期1-3,17,共4页Electronic Components And Materials

基　　金：国防基础科研重大项目资助;湖北省自然科学基金资助项目(No.2010CDB02704)

摘　　要：采用普通固相反应法制备了0.45Ba0.55Sr0.45TiO3-0.55MgO-Mn(NO3)2/MnCO3(简称BST-MgO)陶瓷,通过XRD和SEM研究了不同形态含锰化合物(固态MnCO3及液态Mn(NO3)2)掺杂对所制BST-MgO陶瓷致密化及微波介电性能的影响。结果表明,液态Mn(NO3)2掺杂可以增加锰离子进入BST晶格的几率,同时抑制镁离子进入BST晶格,提高BST-MgO陶瓷的致密度,降低介质损耗,获得较高的综合性能:10 kHz下r=116,tan=0.003 8,可调率(Tu)为19.64%,优值K=51.68;3 GHz时Q.f值达788 GHz。0.45Ba0.55Sr0.45TiO3-0.55MgO-Mn（NO3）2/MnCO3（BST-MgO for short） ceramics were prepared by the traditional solid-state reaction method. The effects of various manganese dopants（solid MnCO3 and liquid Mn（NO3）2）on the densification behavior and the microwave dielectric properties of the prepared BST-MgO ceramics were investigated. The results show that compared with solid MnCO3 doping, liquid Mn（NO3）2 doping can improve the probability of Mn ion to diffuse into BST lattcie and degrade the solubility of Mg2＋ in BST, which subsquently increases the density and reduces dielectric loss of the BST-MgO ceramics. The ceramics doped with Mn（NO3）2 exhibit relatively better dielectric properties： εr=116, tanδ=0.003 8, Tu=19.64%, K=51.68 at 10 kHz and Q·f=788 GHz at 3 GHz.

关 键 词：钛酸锶钡 氧化镁 锰掺杂 介电性能 可调率 

分 类 号：TM22[一般工业技术—材料科学与工程]