脉冲激光沉积温度及氧压对Bi_2Sr_2Co_2O_y热电薄膜晶体结构与电输运性能的影响  

The effects of substrate temperature and oxygen pressure on the crystal strcture and transport properties of Bi_2Sr_2Co_2O_y thermoelectric films deposited by pulsed laser deposition

作　　者：王淑芳[1] 陈珊珊[1] 陈景春[1] 闫国英[1] 乔小齐 刘富强[1] 王江龙[1] 丁学成[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院 河北省光电信息材料重点实验室,保定071002

出　　处：《物理学报》2012年第6期409-413,共5页Acta Physica Sinica

基　　金：国家自然科学基金青年科学基金(批准号:A2009000144);河北省教育厅重点项目(批准号:ZD200909)资助的课题~~

摘　　要：利用脉冲激光沉积技术在c-Al_2O_3单晶基片上制备了Bi_2Sr_2CO_2O_y热电薄膜并研究了沉积温度和氧压对薄膜晶体结构及电输运性能的影响.在最佳沉积条件下制备的单相、c轴取向的Bi_2Sr_2Co_2O_y薄膜的室温电阻率ρ和塞贝克系数S分别为2.9 mΩ/cm和110μV/K,其功率因子S~/ρ好于在单晶样品上得到的值.此外,该薄膜在低温下表现出较强的负磁阻效应,在2 K,9 T时达到了40%.We fabricate Bi_2Sr_2Co_2O_y,films on C-Al_2O_3 by pulsed laser deposition and investigate the effects of substrate temperature and oxygen pressure on the crystal stucture and the transport properties of the films.The resulting single phase c-axis C-Al_2O_3 films obtained under the optimal condition have a room temperature resistivity of about 2.9 mΩ/cm and a seebeck coefficient of 110μV/K, leading to a larger power factor than that of the single crystal.In addition,a negative magnetroresistance of 40%at 2 K and 9 T is observed in the films.

关 键 词：Bi_2Sr_2Co_2O_y热电薄膜 输运特性 脉冲激光沉积 

分 类 号：O611.3[理学—无机化学]