热处理温度对氧化铟薄膜特性的影响  

Influence of heat treatment temperature on the properties of In_2O_3 film

作　　者：冯图[1] 陈怀礼[1] 赵慧芳[1] 

机构地区：[1]西安航天动力研究所,陕西西安710100

出　　处：《传感器世界》2012年第3期6-9,共4页Sensor World

摘　　要：利用离子束溅射沉积的方式在Al2O3陶瓷基片表面制备了In2O3薄膜,并分别研究了热处理温度对薄膜相结构、电阻-温度特性及气敏特性的影响。结果表明:薄膜相结构受热处理温度影响显著,热处理温度高于600℃时,薄膜相结构由无定形状态变为立方相状态;随着热处理温度的升高,薄膜电阻率显著增大;薄膜对CO气体具有良好的气敏特性,热处理温度为600℃时,薄膜对CO气体灵敏度达到最大值。In2O3 beam sputtering. film is deposited on Al2O3 substrate by ion The influence of heat treatment temperature on phase structure, resistance-temperature characteristics and gas sensitive effect is studied. The main conclusions obtained are summarized as follows： phase structure of In2O3 film is influenced by heat treatment temperature obviously and is cubic when the heat treatment temperature is above 600℃. Resistivity of In2O3 film augments with heat treatment temperature hoisting. Sensitivity of In2O3 film for CO is obvious. In2O3 film heat-treated on 600℃ shows the optimum gas sensitivity for CO.

关 键 词：相结构 电阻-温度特性 气敏特性 

分 类 号：TB383.2[一般工业技术—材料科学与工程]