单晶材料X射线应力测定原理与方法  

Principle and Methods of X-ray Residual Stress Measurement on Single Crystal Material

作　　者：陈艳华[1,2] 须庆[1] 姜传海[1] 嵇宁 

机构地区：[1]上海交通大学材料科学与工程学院,上海200240 [2]新疆大学物理科学与技术学院,乌鲁木齐830046 [3]巴黎十一大分子化学和材料学院,奥尔塞91405

出　　处：《理化检验（物理分册）》2012年第3期144-147,共4页Physical Testing and Chemical Analysis(Part A:Physical Testing)

基　　金：国家自然科学基金资助项目(50771066)

摘　　要：结合单晶X射线应力测定基本原理,通过必要的理论分析,对现有单晶应力测定方法进行必要的改进和优化。基于工程实际应用需要,精简了单晶应力测定步骤并拓宽其应用范围,即不需要事先精确已知2θ0,只需改变空间方位角ψ和φ,再通过多元线形回归分析方法即可计算出各应力分量。最后给出了单晶应力测定的典型实例,即对同一部位重复测定应力,证实测量误差不超过±20MPa,说明该方法具有较高的测量精度和可靠性。Combined the basic principle of X-ray residual stress measurement on single crystal material, through the necessary theoretical analysis, the monocrystalline stress measurement method has been improved and optimized successfully. Considering the application demand on engineering, the stress measurement procedure for single crystal material was simplified and the scope of application was broadened. Namely, not need to accurately determine the 2~0 beforehand, only need to change the spatial azimuth angle ~b and 9＇ the stress components can be calculated via multiple linear regression analysis method. Finally, the typical examples of stress measurement on single crystal material were given. Repeated stress measurement on the same site, the experimental results showed that the measuring error was not more than ~ 20 MPa, which indicated that having higher measurement precision and reliability.

关 键 词：单晶材料 X射线衍射 残余应力测定 

分 类 号：TB302[一般工业技术—材料科学与工程]