电感耦合等离子体原子发射光谱法测定高纯三甲基镓中的痕量杂质  

Determination of Trace Elemental Inpurties in High Purity Trimethylgallium by Inductively Coupled Plasma-Atomic Emission Spectrometry

作　　者：虞磊[1] 吕宝源[2] 裘丽雯[3] 孙祥祯[1] 方惠群[1] 

机构地区：[1]南京大学化学系,南京210093 [2]南京地质矿产研究所,南京210016 [3]南京大学成矿作用国家重点实验室,南京210093

出　　处：《分析化学》2000年第1期42-45,共4页Chinese Journal of Analytical Chemistry

基　　金：国家863资助

摘　　要：对电感耦合等离子体原子发射光谱（ICP-AES）法测定高纯三甲基镓（99．9999％，相对于金属镓的含量）中Cu、Fe、Si、Zn等31种痕量杂质元素的含量进行了研究，考察了基体元素镓对杂质元素的光谱和非光谱干扰以及基体浓度对杂质元素谱线信噪比和检出限的影响，在优化的实验条件下，获得了满意的结果。A method of determining Cu, Fe, Si, Zn etc. 31 trace elemetal impurities in high purity Ga (CH_3)_3, by inductively coupled plasma-atomic emission spectrometry is reported. The spectral and non spectral interference of gallium matrix, the effect of the matrix concentration to the signal-to-noise ratio and the detection limits of the determined elements were investigntal. The optimum working conditions,the analgtical spectral lines and matrix concentration were examined. And we also studied the decomposition of the trimethylgallium.

关 键 词：原子发射光谱 三甲基镓 杂质 

分 类 号：O657.3[理学—分析化学]