新型前栅场发射器件的研究  

Fabrication of Normal-Gate Field Emission Display with Carbon Nanotube

作　　者：杨帆[1] 胡利勤[1] 林贺[1] 郑隆武[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福州350002

出　　处：《真空科学与技术学报》2012年第3期192-195,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家"863"重大专项资助项目(2008AA03A313);福建省自然科学基金项目(2009J05145);场致发射显示技术教育部工程研究中心开放基金项目(KFJJ1009)

摘　　要：采用刻蚀型介质制作前栅场发射器件。该器件中阴栅结构的形成是利用刻蚀工艺刻蚀介质层,一次性实现栅孔和阴极电极的连通,最后利用电泳沉积工艺转移碳纳米管制备成阴极发射点阵。该工艺避免了对准或套印,使前栅场发射器件制作工艺更简单,降低了成本,更容易实现大面积制作。场发射测试表明当阳压在1500和2000 V时,栅压都能够有效地控制阴极的电子发射。A novel type of the normal-gate field emission display （FED） device with the etched dielectric layer and carbon nanotubes was fabricated. First, the cathode-gate structure, where the gate-hole and the cathode are connected, was made by etching the dielectric layer. Next, the device-grade,carbon nanotubes （CNTs） were installed into the holes by electrophoretic deposition to form the field emission dat-matrix. Finally, the prototyped FED device was packed and test- ed. The preliminary results show that the gate electrode is capable of precisely controlling the emission at voltages of 1500 V and 2000 V. The advantages of the newly-developed techniques over the conventional ones include simple procedure, low cost,no technical limitations in misalignment and overprinting.

关 键 词：刻蚀型介质前栅场发射 

分 类 号：TN383.1[电子电信—物理电子学]