溶胶凝胶法制备Cu掺杂ZnO纳米薄膜及其表征  

Growth and Characterization of Cu-Doped ZnO Sol-Gel Films

作　　者：李建昌[1] 王博锋[1] 姜永辉[1] 巴德纯[1] 

机构地区：[1]东北大学机械工程及自动化学院真空与流体工程中心,沈阳110004

出　　处：《真空科学与技术学报》2012年第3期236-239,共4页Chinese Journal of Vacuum Science and Technology

基　　金：教育部留学回国人员科研启动基金(20091341-4);中央高校基本科研业务费专项资金资助项目(N090403001)

摘　　要：采用溶胶-凝胶法制备了不同Cu掺杂浓度的ZnO薄膜,并通过X射线衍射仪、扫描电子显微镜、紫外可见分光光度计和伏安特性测试等研究了Cu掺杂量对薄膜微观结构、表面形貌及光电特性的影响。结果表明:所得Cu掺杂ZnO薄膜为六角纤锌矿多晶结构,有CuO杂质相生成。随Cu掺杂量的增加,薄膜晶粒长大,且样品粒度均匀,平均粒径约53 nm。Cu掺杂ZnO薄膜具有良好的透光性,在可见光范围内的平均透射率超过80%,最大可达90%以上。Cu掺杂浓度为0.001%时,所得ZnO薄膜的导电性明显优于其他掺杂条件下的样品。The Cu-doped ZnO films were deposited in sol-gel method on substrates of Si and indium-tin-oxide （ITO） coated glass. The impacts of the growth conditions, such as the Cu-doping levels, annealing temperature, and film thick- ness, on the microstructures and properties of the ZnO polycrystalline films were studied. The Cu-doped ZnO films were characterized with X-my diffraction, scanning electron microscopy, ultraviolet visible （UV-Vis） spectroscopy, and conven- tional surface probes. The results show that the Cu-doping level strongly affects the hexagonal wurtzite-structured ZnO films, and improves its properties. For example, as the Cu content increased, the ZnO films became more uniform with big- ger grains, with an averaged size of 53 nm. The averaged and highest visible transparency of the Cu-doped ZnO films grown under optimized conditions were found to be 80% and 90% ,respectively. The ZnO film doped with 0.001% of Cu displays the highest conductivity.

关 键 词：溶胶.凝胶法氧化锌薄膜Cu掺杂光电特性 

分 类 号：O484[理学—固体物理]