溶胶-凝胶法制备Y掺杂ZnO薄膜及其光电性能研究  

Preparation of Y Doped ZnO Films by Sol-gel Method and Investigation of Their Optoelectrical Properties

作　　者：阳生红[1] 张曰理[1,2] 王旭升[1] 汤健[1] 

机构地区：[1]中山大学物理科学与工程技术学院光电材料与技术国家重点实验室,广州510275 [2]山东大学晶体材料国家重点实验室,济南250100

出　　处：《材料导报》2012年第6期24-26,37,共4页Materials Reports

基　　金：国家自然科学基金(61176010;61172027);广东省自然科学基金(S2011010001397)

摘　　要：采用溶胶-凝胶法在玻璃衬底上制备了不同掺Y浓度的ZnO透明导电薄膜。X射线衍射(XRD)表明,所制备的Y掺杂ZnO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有C轴择优取向。随着Y掺杂浓度的升高,(002)峰向低角度方向移动。UV透射曲线表明,薄膜在可见光区(400～800nm)的平均透过率超过85%,具有明显的紫外吸收边,通过改变Y的掺入浓度,可以使吸收边向短波方向移动,从而使薄膜的禁带宽度可调。制备的Y掺杂ZnO薄膜电阻率最小值为3.68×102Ω·cm。The Y doped ZnO transparent conducting thin films were prepared on glass by sol-gel method. X-ray diffraction（XRD） showed that Y doped ZnO thin films had hexagonal wurtzite structure with a C-axis preferred orien- tation. The peak position of the （002） plane shifted to the low angle value with the increase of Y doping. From the transmittance spectrum, the average transmittance of Y doped ZnO film in the visible region （400-800nm） was be- yond 85%, and the optical absorption edge obviously shifted to the shorter wavelength with increasing Y doping. So the film band gap energy can be adiusted by changing the Y doping concentration. The minimum resistivity of Y doped ZnO film is 3. 68×102Ω·cm.

关 键 词：Y掺杂 ZnO透明导电薄膜 溶胶-凝胶法 

分 类 号：O484.4[理学—固体物理] TN304[理学—物理]