TiO_2过渡层对Si基ZnO薄膜光致发光特性的影响  

Influence of TiO_2 Buffer on the Photoluminescence of ZnO Films on Si Substrates

作　　者：张伟英[1,2] 刘振中[1,2] 赵建果[1,2] 刘照军[1,2] 

机构地区：[1]洛阳师范学院物理与电子信息学院 [2]洛阳市激光光谱技术重点实验室,洛阳471022

出　　处：《材料导报》2012年第6期31-33,共3页Materials Reports

基　　金：河南省科技攻关项目(102102210452;102102210448);河南省教育厅自然科学研究项目(2010A140011)

摘　　要：采用直流反应溅射法在Si(100)衬底上制备了有TiO2过渡层的ZnO薄膜,并与直接在Si上生长的样品进行比较。通过X射线衍射技术和光致发光谱等分别对ZnO薄膜的结构和光学性质进行测量和分析。测量结果表明,引入过渡层后ZnO薄膜的平均晶粒尺寸变大,晶粒间界变少,结晶质量提高,薄膜内的应力得到一定程度的释放。此外,室温光致发光谱表明过渡层使ZnO薄膜的紫外发射明显增强,并研究和分析了其微观机理。ZnO films were prepared on Si（100） substrates by direct current（DC;） reactive sputtering with and without TiO2 buffer. The crystal structures and optical properties were investigated by X-ray diffraction（XRD） and photoluminescence（PL）. The XRD results demonstrated that the crystal grains became larger, crystal boundaries be- came fewer, and the crystal quality of ZnO film became better by introducing TiO2 buffer. In addition, stronger ultra- violet emission was observed from ZnO film with TiOa than that without at room temperature. The low temperature photoluminescence was investigated to understand the different PL mechanism of ZnO films.

关 键 词：ZnO薄膜过渡层TiO2薄膜 

分 类 号：O484[理学—固体物理]