有机发光器件中空穴注入对负电容的影响  

Effects of the hole injection on negative capacitance in organic light-emitting diodes

作　　者：曹进[1] 张勇[1,2] 王立[1] 容佳玲[1] 魏斌[1] 朱文清[1] 

机构地区：[1]上海大学新型显示技术及应用集成教育部重点实验室,上海200072 [2]上海大学机电工程与自动化学院,上海200072

出　　处：《光电子．激光》2012年第4期659-662,共4页Journal of Optoelectronics·Laser

基　　金：上海自然科学基金(09ZR1411900);上海大学第四届研究生创新基金(A.16-0109-10-060)资助项目

摘　　要：对不同结构的有机发光器件(OLED)进行了电容-电压(C-V)特性测量,研究了不同空穴注入结构对OLED负电容的影响。结果表明,负电容的产生与OLED内部电场的分布有着密切的关系,负电容开始出现的频率与电压的平方根呈指数关系。与超薄的单层空穴注入层相比,掺杂的空穴注入层不仅能降低器件的驱动电压,而且其载流子传输特性和出现负电容时的初始电压对频率有着更强的依赖性。The capacitance-voltage（C-V） characteristics of organic light emitting diodes（OLEDs） are studied.The effects of hole-injection layer on the negative capacitance of OLEDs are investigated.The results show that the negative capacitance is closely related to the electric field distribution in organic hetero-layer light emitting devices,and the onset frequency of the negative capacitance increases exponentially with the square root of the applied bias.Compared with the device with thin film hole-injection layer,the device with doped hole-injection layer has a lower driving voltage,while its charge transfer characteristic and the onset voltage of negative capacitance are more dependent on frequency.

关 键 词：有机发光器件(OLED) 电容-电压(C-V) 负电容 

分 类 号：TN383[电子电信—物理电子学]