大功率半导体激光阵列远场光强分布研究  

Study on the far-field intensity distribution of high-power semiconductor Bar and Stack lasers

作　　者：李彬[1] 曾晓东[1] 商继敏[1] 霍雷[1] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071

出　　处：《光电子．激光》2012年第4期667-675,共9页Journal of Optoelectronics·Laser

基　　金：中央高校基本科研业务费(k50510050010);重点实验室基金(9140c310403090c31)资助项目

摘　　要：针对Bar和Stack两种类型激光器,运用双峰模型,对各个发光单元的光强进行非相干叠加,得出Bar和Stack两种激光器的远场光强模型,并根据此模型模拟出Bar和Stack的远场光强分布。分别定量描述了Bar和Stack光强分布均匀的区域以及开始出现类似单发光单元的双峰分布的位置,并给出了相应的经验计算公式。利用这些公式以及器件数据手册给出的参数即可方便的计算出Bar和Stack的均匀区域以及出现类似单发光单元的双峰分布的位置。理论分析与实验结果基本吻合。可为Bar和Stack在实际应用中设计光学系统以及光束质量评价提供理论依据。In this paper,the bi-peak model is applied on both Bar and Stack lasers.By superposition of intensity for each emitter non-coherently,the far-field intensity models of Bar and Stack lasers are obtained.According to this model,the distributions of far-field intensity of Bar and Stack lasers are simulated.For Bar and Stack lasers,quantitative descriptions of both homogeneously-distributed regions and the position where the distribution is similar to bi-peak distribution formed by a single emitter are given.The corresponding experienced formulas are also presented.By employing these formulas and the parameters on the datasheet,the homogeneously-distributed regions and the position where the distribution is similar to the bi-peak distribution formed by a single emitter can be easily found.The results are expected to provide a theoretical foundation for the design of optical systems and the evaluation of the laser beam quality in the practical application.

关 键 词：激光光学 半导体激光器 远场分布 BAR STACK 双峰模型 

分 类 号：TN248.4[电子电信—物理电子学]