热致漂白效应对非晶Ge_(34)Ga_2S_(64)薄膜结构和光学特性的影响  

Effect of thermal-bleaching on the structure and optical properties of thermally evaporated Ge_(34)Ga_2S_(64) film

作　　者：陈昱[1] 沈祥[1] 王国祥[1] 付晶[1] 陈芬[1] 李军[1] 张巍[1] 林常规[1] 戴世勋[1] 徐铁峰[1] 聂秋华[1] 

机构地区：[1]宁波大学红外材料及器件实验室

出　　处：《光电子．激光》2012年第4期718-723,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(60978058;61008041);浙江省自然科学基金(Y1090996);宁波市新型光功能材料与器件创新团队基金(2009B21007);宁波自然基金(2011A610092);瞬态光学与光子技术国家重点实验室开放课题(SKLST201010);宁波大学胡岚博士基金及王宽诚幸福基金;宁波大学优秀学位论文培育基金;浙江省大学生科技创新活动计划(2001R405055)资助项目

摘　　要：采用热蒸发法技术沉积Ge34Ga2S64非晶薄膜,并对薄膜样品在375℃热处理2h。通过分光光度计、表面轮廓仪和显微拉曼光谱仪测试热处理前后薄膜样品的透过曲线、薄膜厚度和拉曼结构。利用薄膜干涉曲线的波峰和波谷计算了薄膜的厚度和折射率,并根据Swanepoel方法以及Tauc公式分别计算了薄膜折射率色散曲线和光学带隙等参数。结果表明,Ge34Ga2S64非晶薄膜经热处理后发生热致漂白效应,大分子团簇以及Ge-Ge、S-S同极错键含量明显减少,网络结构无序性降低,从而引起薄膜的光学吸收边蓝移、折射率降低、表面粗糙度(Ra)降低0.515nm和光学带隙增大0.118eV。Amorphous films of Ge34Ga2S64were deposited on quartz substrates by using thermal evaporation method.The optical parameters of as-deposited and annealed films are calculated using the Swanepoel method and Tauc law from the optical transmission spectra.After the heat treatment of as-deposited films at 375 ℃ for 2 h,the thermal-bleaching effects are observed,which are related to the reduction of clusters and fragments,as well as the density of homopolar bonds confirmed by the Raman spectra.As a result,the absorption spectra are blue shifted,the optical band gap of the studied films is increased by 0.118 eV,and the surface roughness is decreased by 0.515 nm.

关 键 词：Ge-Ga-S薄膜 热蒸发 光学参数 拉曼结构 热致漂白 

分 类 号：TQ171.1[化学工程—玻璃工业] O437[化学工程—硅酸盐工业]