基于电阻温度系数的GaN基LED结温测量研究  

Study on the Junction Temperature Measurement of GaN Based LED Using Resistance Temperature Coefficient

作　　者：谢华清[1] 黎阳[1] 吴中林[2] 

机构地区：[1]上海第二工业大学城市建设与环境工程学院,上海201209 [2]上海第二工业大学理学院,上海201209

出　　处：《上海第二工业大学学报》2012年第1期1-6,共6页Journal of Shanghai Polytechnic University

基　　金：上海高校特聘教授(东方学者)岗位支持计划

摘　　要：实验研究了不同驱动电流下GaN基LED的电阻与温度的关系,发现LED的电阻随工作温度的升高而减小,且两者成线性关系;通过线性拟合得到的电阻温度系数值在宽的驱动电流范围内维持稳定。利用这一特性,可以通过标定单个设定电流下的电阻温度系数,实现任意工作电流(该工作电流应处于电阻温度系数维持稳定的电流范围内)作用下LED结温的测试。Tbe relationship between the resistance and the temperature of a GaN based light emitting diode （LED） has been investigated under different driving current. It was found that the resistance decreased proportionally with an increase in the temperature. The resistance-temperature coefficient has been obtained by linearly fitting resistance and temperature. The coefficient values keep almost constantly in a wide driving current range. Using this characteristic, the junction temperatures of LED under any working current （within the current range in which the coefficient values almost constantly） can be detected by determining the resistance-temperature coefficient under a specific current.

关 键 词：发光二极管 结温:氮化镓 电阻温度系数 

分 类 号：TN312.8[电子电信—物理电子学]