微等离子体氧化法电源参数对TiO_2薄膜光催化性能的影响  

The Influence to TiO_2 Thin Film Photocatalyst by the Power Parameters of Micro Plasma Oxidation

作　　者：王松[1] 于忠臣[1] 刘继伟[1] 

机构地区：[1]东北石油大学地球科学学院,黑龙江大庆163318

出　　处：《污染防治技术》2012年第1期21-23,共3页Pollution Control Technology

基　　金：黑龙江省教育厅科技研究项目资助(编号:1551008)

摘　　要：采用微等离子体氧化法制备TiO2薄膜光催化剂,以硫酸溶液为电解液,电源输出选用先恒流再恒压模式,探讨微离子氧化法的电压和电流密度对TiO2薄膜光催化性能的影响。结果表明,当电压为170 V,电流密度为0.125/cm2,成膜时间为10 min时,所得TiO2薄膜光催化性能较好,2h内降解罗丹明B达到99%以上。TiO2 film was prepared under the sulfuric acid solution as electrolyte by micro plasma method. The mode of power output is first constant current and then constant voltage. The effect of the voltage and current density on the photocatalytic perform- ance is discussed. The results show that theTiO2 thin film has optimum photocatalytic performan when TiO2 film is prepared under the current density of 0. 125 A/cm^2 , voltage of 170 V and the reaction time of 10 mins. The degradation efficiency of the TiO2 film reached more than 99% after 2 h.

关 键 词：微等离子体氧化 光催化 TIO2 

分 类 号：TG147.45[一般工业技术—材料科学与工程]