基于Klarite芯片的表面增强拉曼散射特性研究  

Surface-Enhanced Raman Scattering Properties of Klarite Chips

作　　者：王俊俏[1] 朱双美[1] 何金娜[1] 程永光[1] 范春珍[1] 蔡根旺[1] 梁二军[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052

出　　处：《光散射学报》2012年第1期17-22,共6页The Journal of Light Scattering

基　　金：国家自然科学基金(10974183)

摘　　要：本文介绍了一种商用的表面增强拉曼芯片(Klarite),并对其表面形貌、拉曼活性进行了表征和测试分析。Klarite芯片由于独特的倒金字塔形设计使得其具有较好的拉曼活性、稳定性和重现性,为生命科学和分析化学研究提供了有力的研究工具。此外,我们对Klarite芯片在外电磁场作用下的表面电场分布进行了模拟,发现一个结构单元中存在多个"热点"区域,并且最大电磁场的增强随着倒置金字塔的高度h改变而变化,当h为600nm时,电磁场增强达到最大,约为25倍。In this article, a kind of commercial strates （called Klarite chips） is introduced. The surface-enhanced Raman scattering sub- surface morphology and Raman activity of the Klarite chips are investigated. The Klarite chips exhibit good Raman activity, stability and repeatability due to special design of inverse pyramid-shaped structures, which provide a powerful tool for bioscience and analytical chemistry fields. The distributions of electric field on the surface of Klarite chips under external electromagnetic field are simulated. It is shown that there are several ＂hot spots＂ in one cell and the enhancement of the electric field varies with the height of inverse pyramid-shaped structures. The field enhancement factor reaches its maximum of about 25 when the height of the inverse pyramid-shaped structures is 600nm.

关 键 词：Klarite芯片 表面增强拉曼散射 电场增强 

分 类 号：O433[机械工程—光学工程] TB39[理学—光学]