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作 者:Guangzhao RAN Hongqiang LI Chong WANG
出 处:《Frontiers of Optoelectronics》2012年第1期3-6,共4页光电子前沿(英文版)
基 金:Acknowledgements This work was supported by the National Natural Science Foundation of China (Grant Nos. 60877022 and 11174018).
摘 要:Practical silicon photonic interconnects become possible nowadays after the realization of the practical silicon light sources, where the hybrid integrations of III-V semiconductors and silicon by bonding play a fundamental role. Photonic interconnects dissipate substantially less power and offer a significantly greater information bandwidth than those of electronic interconnects; however, one emerging problem is the size mismatch between photonic and electronic components when integrated on a chip. Therefore, surface plasmonic source with deeply sub-wavelength size is under intense investigation as the next generation Si-based light source for on-chip interconnects. In this paper, we shall review some of the latest achievements on this topic.Practical silicon photonic interconnects become possible nowadays after the realization of the practical silicon light sources, where the hybrid integrations of III-V semiconductors and silicon by bonding play a fundamental role. Photonic interconnects dissipate substantially less power and offer a significantly greater information bandwidth than those of electronic interconnects; however, one emerging problem is the size mismatch between photonic and electronic components when integrated on a chip. Therefore, surface plasmonic source with deeply sub-wavelength size is under intense investigation as the next generation Si-based light source for on-chip interconnects. In this paper, we shall review some of the latest achievements on this topic.
关 键 词:surface plasmon (SP) silicon photonics photonic interconnect surface plasmon amplification by stimulated emission of radiation (SPASER)
分 类 号:TN201[电子电信—物理电子学] O484[理学—固体物理]
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