碲镉汞材料表面钝化研究的发展(下)  

Research Progress of Surface Passivation of Mercury Cadmium Telluride Materials(Ⅱ)

作　　者：王忆锋[1] 刘黎明[1] 孙祥乐[1] 陈燕[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外》2012年第4期7-13,共7页Infrared

摘　　要：碲镉汞(Hg_(1-x)Cd_xTe,MCT)材料的表面钝化被认为是光导和光伏探测器制备中的关键步骤之一。实用的MCT器件需要稳定且可重复生产的钝化表面和符合器件性能要求的界面及表面势。通过对近年来的部分英语文献进行归纳分析,介绍了MCT表面钝化研究的进展。描述了MCT钝化的基本概念。讨论了部分MCT钝化膜的生长方法、界面性质和参数。The surface passivation of Mercury Cadmium Telluride （MCT） materials is one of the crucial steps for fabricating photoconductive and photovoltaic detectors. Practical MCT devices need stable and reproducible passivated surfaces and the surface potentials which meet their performance requirements. The research progress of the surface passivation of MCT materials is presented. The basic concepts of the passivation of MCT materials are described. The growth methods, interface properties and parameters of some passivation layers are discussed.

关 键 词：碲镉汞 红外探测器 表面钝化 表面处理 

分 类 号：TN304[电子电信—物理电子学]