应力对厚30nm的FeCoSiB薄膜影响的微磁模拟  

Micromagnetic Simulation of the Effects of the Stress on FeCoSiB Film with the Thickness of 30 nm

作　　者：张彩虹[1] 杨成韬[1] 庞翔[1] 毕长红[1] 张万里[1] 彭斌[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2012年第2期293-295,298,共4页Piezoelectrics & Acoustooptics

基　　金：国家重点基础研究发展计划("九七三"计划)基金资助项目(51613Z)

摘　　要：从微磁学理论出发,建立了单轴应力作用下的等效模型;利用美国国家标准技术协会(NIST)开发的微磁学软件OOMMF,从理论上研究应力对厚30nm的FeCoSiB非晶磁弹性薄膜图形化单元磁畴、剩磁、矫顽力等磁性特性的影响。结果表明,FeCoSiB非晶磁弹性薄膜的磁矩分布随应力的变化明显不同;当应力于外磁场方向平行时,薄膜单元的矫顽力和剩磁随张应力的增加而线性增加,随着压应力的增加而线性减小。Based upon the micromagnetic theory,an equivalent model has been established to include the effect of the uniaxial stress.The effects of the stress with different strength on the magnetic properties（like magnetic moments、remanence and coercivity） of the amorphous magnetoelastic films of FeCoSiB with the thickness of 30 nm were investigated theoretically by the micromagnetic software OOMMF which was developed at the national institute of standards and technology（NIST）.The results show that the magnetic moments distribution were varied with different stresses;when the direction of the stresses was parellel to the external magnetic field,the coercivity and remanence of the film cells were increased linearly with the tensile stresses increase,while decreased linearly with the compressive stresses increase.

关 键 词：微磁学模拟 剩磁 矫顽力 应力 

分 类 号：TM271[一般工业技术—材料科学与工程]