A model for thermal annealing on forming In—N clusters in InGaNP  

作　　者：ZHAO ChuanZhen CHEN Lei LI NaNa ZHANG HuanHuan CHEN YaFei WEI Tong TANG ChunXiao XIE ZiLi 

机构地区：[1]School of Electronics and Information Engineering,Tianjin Polytechnics University,Tianjin 300160,China [2]School of Textiles,Tianjin Polytechnic University,Tianfin 300160,China [3]Key Laboratory of Advanced Textile Composites,Ministry of Education of China,Tianjin 300160,China [4]College of Science,Civil Aviation University of China,Tianjin 300300,China [5]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第5期798-801,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the Special Funds for the Major State Basic Research Project (Grant No.2011CB301900);the National Natural Science Foundation of China (Grant Nos.60990311,60820106003,60906025,60936004 and 61177078);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019,BK2010385,BK2009255 and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics

摘　　要：We develop a model for the effect of thermal annealing on forming In--N dusters in GalnNP according to thermodynamics. The average energy variation for forming an In--N bond in the model is estimated according to the theoretical calculation. Using the model, the added number of In--N bonds per mol of InGaNP, the added number of nearest-neighbor In atoms per N atom and the average number of nearest-neighbor In atoms per N atom after annealing are calculated. The different function of In--N clusters in InGaNP and InGaN is also discussed, which is due to the different environments around the In--N clusters.We develop a model for the effect of thermal annealing on forming In-N clusters in GaInNP according to thermodynamics.The average energy variation for forming an In-N bond in the model is estimated according to the theoretical calculation.Using the model,the added number of In-N bonds per mol of InGaNP,the added number of nearest-neighbor In atoms per N atom and the average number of nearest-neighbor In atoms per N atom after annealing are calculated.The different function of In-N clusters in InGaNP and InGaN is also discussed,which is due to the different environments around the In-N clusters.

关 键 词：InGaNP ANNEALING In--N clusters THERMODYNAMICS 

分 类 号：O4[理学—物理] TN304.21[电子电信—物理电子学]