A systematic analysis of good matching sites between two lattices  

作　　者：YANG XiaoPeng ZHANG WenZheng 

机构地区：[1]Laboratory of Advanced Materials,Department of Materials Science and Engineering,Tsinghua University,Beijing 100084,China

出　　处：《Science China(Technological Sciences)》2012年第5期1343-1352,共10页中国科学（技术科学英文版）

基　　金：supported from the National Natural Science Foundation of China (Grant No. 1171088);the National Basic Research Program of China (Grant No. 12CB619403) from Chinese Ministry of Science and Technology

摘　　要：The geometrical matching/mismatching of lattices overlapped in 1, 2 and 3 dimensions have been analyzed systematically by variation of lattice misfit in a large range, far beyond the limits for semicoherent interfaces. In order to evaluate the degree of matching, the density of good matching site （GMS） between two lattices is calculated. The analysis shows that the GMS density remains approximately constant, irrespectively to the degree of lattice misfit. This constant, defined as the average GMS density, decreases exponentially with the increasing dimension of misfit. Typically, for 6 = 15%, the average GMS densities are approximately 30%, 7%, and 1.4% for 1D, 2D, and 3D lattice misfits, respectively. The GMS density deviates significantly if a CSL of small X can be defined. The relationship between the GMS distribution and O-lattice is investigated. It indicates that an abrupt increase in the GMS density in an interface parallel to a principal O-lattice plane is equivalent to a reduction of dimension of misfit. This shows the agreement between the selections of principal O-lattice planes as candidates of the preferred interfaces and the condition that interfaces with high GMS density are preferred.

关 键 词：good matching sites （GMS） O-lattice near-coincidence sites （NCS） structure ledge coincidence site lattice （CSL） 

分 类 号：TN304.24[电子电信—物理电子学] TQ314.255[化学工程—高聚物工业]